全新的GaN场效应晶体管、放大器及开关助力系统工程师减少射频电路板空间与系统常用功率

Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design engineers enhanced flexibility and performance options by reducing RF board space and system prime power requirements.  

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